Technology
A Promising Material
Gallium Nitride (GaN) is a wide bandgap semiconductor material used mainly in optoelectronic devices but also high-power and high-frequency devices. Gallium Nitride is recognized as one of the most promising materials for the fabrication of optical devices with wavelengths in the green, blue, and UV regions. It complements common red LEDs by completing the range of primary colors and thus makes high-efficiency RGB color applications possible.
The Key to Efficiency
Traditionally, GaN devices were created by depositing a thin film of Gallium Nitride on a foreign substrate such as sapphire or silicon carbide. However, the lattice mismatch between the two materials introduces billions of defects per square centimeter which have adverse effects on the production yields and lifetime of the respective devices.
The key to avoiding these defects and significantly increasing the efficiency of the resulting devices is to use GaN substrates as the underlying material for depositing the devices. Inlustra aims to provide these high-quality Gallium Nitride substrates to academic and commercial customers.
For Your Information
The advantages of GaN over foreign substrates have been widely researched and documented. Please use our online form to request further information.